Faruque has obtained his PhD degree in Engineering Materials from the Tokyo Institute of Technology and joined QCV in June, 2006. His area of expertise is in the modeling of electronic devices, particularly the grain boundary modeling of polycrystalline ZnO thin-film transistors (TFT); the fabrication of device grade ZnO thin-film using pulsed laser deposition (PLD) system; ab initio density functional theory (DFT) calculations on oxide (TiO2) and boride (LaB6) materials. He achieved expertise in modeling different types of color centers (N-V center, NE8 center, Si-V center etc.) and its electronic and optical properties in diamond using DFT methods. His current goal is to find color centers in diamond which has zero phonon line (ZPL) emission in telecommunication wavelength (infrared) range.